PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication
Shen-Li Chen1, *, Chin-Chai Chen1, Yeong-Lin Lai2, Wen-Jung Chiang2, Hung-Wei Chen1
1 Department of Electronic Engineering, National United University, MiaoLi City 36063, Taiwan
2 Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan
Abstract
In this study, a thermal annealing process was used for evaluating the recovering effect of the surface bombardment in the plasma etching process. After inductively coupled plasma (ICP) etching, the n-GaN samples were heated and annealed in an N2 ambient, which influenced the electrical and photonic characteristics of the devices under test. Eventually, it showed that the resistance improved after the annealing treatment, particularly at a temperature of 550 °C. Furthermore, photoluminescence (and emission-intensity degradation) measurements yielded the same results for these n-GaN LED samples, which increased to 200% (8%) of that of a nonannealing reference group at this annealing temperature. However, this annealing treatment did not completely repair the luminescence intensity and emission life-time because of the formation of deep-level point defects on the n-GaN sample surface during the fabrication process.
Keywords: Gallium nitride (GaN), inductively coupled plasma (ICP), photoluminescence (PL), thermal annealing.
Article Information
Article History:
Received Date: 8/4/2015
Revision Received Date: 15/5/2015
Acceptance Date: 4/7/2015
Electronic publication date: 15/07/2016
Collection year: 2016
© Chen et al.; Licensee Bentham Open.
open-access license: This is an open access article licensed under the terms of the Creative Commons Attribution-Non-Commercial 4.0 International Public License (CC BY-NC 4.0) (
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*
Address correspondence to this author at the Department of Electronic Engineering, National United University, MiaoLi City 36063, Taiwan; Tel: +886-37-382525; Fax: +886-37-362498; E-mail: jackchen@nuu.edu.tw
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Manuscript submitted on 8-4-2015 |
Original Manuscript |
PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication |