Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted
with Mn has been studied. Czochralski Si wafers both n- and p-type, of high- and low-resistivity, as well as a float
zone Si were implanted with impurity fluencies of (1 - 5) x 10-16 cm-2. The Mn impurity was found to compensate acceptors
in a high-resistivity p-Si and donors in a low-resistivity n-Si. Only the small part of Mn ions in Si apparently incorporates
into the Si crystal lattice, occupies the interstitial sites and the appropriate energy levels (Mni) -/0 and (Mni)+/++ equal to Ec – 0.12 eV for n-type Si and Ev + 0.32 eV for p-type Si, respectively, are activated after vacuum annealing.