A Selective Review of the Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals
V.I. Talanin *, I.E. TalaninDepartment of Programming and Information Technology, Classic Private University, Zaporozhye, Ukraine
Abstract
A brief review of the current state of theoretical description of the formation of the defect structure of dislocation-free silicon single crystals was carried out. Emphasis was placed on a new diffusion model of formation grown-in microdefects. It is shown that the diffusion model can describe the high-temperature precipitation of impurities during the cooling of the crystal after growth. Shown that the model of the dynamics of point defects can be considered as component part of the diffusion model for formation grown-in microdefects.
PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx.
Keywords: Grown-in microdefects, precipitate, silicon, simulation, software.
Article Information
Article History:
Received Date: 24/8/2011
Revision Received Date: 27/11/2011
Acceptance Date: 29/11/2011
Electronic publication date: 9/10/2009
Collection year: 2009
© Talanin and Talanin; Licensee Bentham Open.
open-access license: This is an open access article licensed under the terms of the Creative Commons Attribution Non-Commercial License(
http://creativecommons.org/licenses/by-nc/3.0/), which permits unrestrictive use, distribution, and reproduction in any medium, provided the original work is properly cited.
* Address correspondence to this author at the Department of Programming and Information Technology, Classic Private University, Zaporozhye, Ukraine; Tel/Fax: +(38) 0612639973; E-mail: v.i.talanin@mail.ru
Open Peer Review Details |
Manuscript submitted on 24-8-2011 |
Original Manuscript |
A Selective Review of the Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals |