Abstract HTML Views: 818 PDF Downloads: 349 Total Views/Downloads: 1346
Abstract HTML Views: 587 PDF Downloads: 223 Total Views/Downloads: 938
The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with
higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well
as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its
ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.