Abstract HTML Views: 591 PDF Downloads: 276 Total Views/Downloads: 981
Abstract HTML Views: 430 PDF Downloads: 185 Total Views/Downloads: 704
An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias
effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve
breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon
layer and the buried oxide layer. The LDBL thickness is a key parameter to affect the strong inversion condition in the
back MOS capacitor of the new SOI diode. The optimum design of LDBL thickness for the SOI diode was 2.65 μm. Furthermore,
the breakdown capability has been improved 11%.